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ACT-S512K8 High Speed 4 Megabit Monolithic SRAM
Features
Low Power Monolithic CMOS 512K x 8 SRAM I Full Military (-55C to +125C) Temperature Range I Input and Output TTL Compatible Design I Fast 17,20,25,35,45 & 55ns Maximum Access Times I +5 V Power Supply I MIL-PRF-38534 Compliant MCMs Available I Industry Standard Pinouts I Packaging - Hermetic Ceramic
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CIRCUIT TECHNOLOGY
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General Description
The ACT-S512K8 is a high speed, 4 Megabit CMOS Monolithic SRAM designed for full temperature range military, space, or high reliability mass memory and fast cache applications. The MCM is input and output TTL compatible. Writing is executed when the write enable (WE) and chip enable (CE) inputs are low and output enable (OE) is high. Reading is accomplished when WE is high and CE and OE are both low. Access time grades of 17ns, 20ns, 25ns, 35ns, 45ns and 55ns maximum are standard. The +5 Volt power supply version is standard and +3.3 Volt lower power model is a future optional product. The products are designed for operation over the temperature range of -55C to +125C and under the full military environment. A DESC Standard Military Drawing (SMD) number is released. The ACT-S512K8 is manufactured in Aeroflex's 80,000 square foot MIL-PRF-38534 certified facility in Plainview, N.Y.
36 Lead, .92" x .51" x .13" Flat Package (FP), Aeroflex code# "F3" 36 Lead, .92" x .43" x .184" Small Outline J lead (CSOJ), Aeroflex code# "F4" (.155 MAX thickness available, contact factory for details) G 32 Lead, 1.6" x .60" x .20" Dual-in-line (DIP), Aeroflex code# "P4"
G G
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DESC SMD# 5962-95613 Released(F3,F4,P4) Block Diagram - Flat Package(F3,F16), DIP(P4) & CSOJ(F4)
CE WE OE A0 - A18 Vss Vcc 512Kx8
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I/O0-7
Pin Description I/O0-7 A0-18 WE CE OE VCC VSS NC Data I/O Address Inputs Write Enable Chip Enable Output Enable Power Supply Ground Not Connected
eroflex Circuit Technology - Advanced Multichip Modules (c) SCD1664 REV C 5/10/00
Absolute Maximum Ratings
Symbol TC TSTG PD VG VCC TJ Parameter Case Operating Temp. Storage Temperature Maximum Package Power Dissipation Maximum Signal Voltage to Ground Power Supply Voltage Junction Temperature MINIMUM -55 -65 -0.5 -0.5 MAXIMUM +125 +150 1.1 VCC + 0.5 +7.0 +150 Units C C W V V C
Recommended Operating Conditions
Symbol VCC VIH VIL TA Parameter Power Supply Voltage Input High Voltage Input Low Voltage Operating Temp. (Mil) Minimum +4.5 +2.2 -0.5 -55 Maximum +5.5 VCC + 0.3 +0.8 +125 Units V V V C
Truth Table
Mode Standby Read Output Disable Write CE H L L L OE X L H X WE X H H L Data I/O High Z Data OUT High Z Data IN Power Standby (deselect/power down) Active Active (deselected) Active
Capacitance
(VIN = 0V, f = 1MHz, Tc = 25C, unless otherwise noted, Guaranteed but not tested) Symbol CIN COUT Parameter Input Capacitance (A0-18, WE & OE) Output Capacitance (I/O0-7 & CE) Maximum 20 20 Units pF pF
DC Characteristics
(VCC = 5.0V, VSS = 0V, Tc = -55C to +125C, unless otherwise specified) Parameter Input Leakage Current Output Leakage Current Operating Supply Current Standby Current Output Low Voltage Output High Voltage
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Sym ILI ILO ICC ISB
Conditions VCC = Max, VIN = 0 to VCC CE = VIH, OE = VIH, VOUT = 0 to VCC CE = VIL, OE = VIH, Vcc=5.5V, f =5MHz CMOS Compatible CE = Vcc, OE= VIH, Vcc=5.5V, f =5MHz CMOS Compatible
ALL SPEEDS Units Min Max -10 -10 2.4
SCD1664 REV C 5/10/00
+10 +10 170 20 0.4 -
A A mA mA V V
VOL IOL = 8 mA, Vcc = 4.5V VOH IOH = -4 mA, Vcc = 4.5V
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Plainview NY (516) 694-6700
AC Characteristics
(VCC = 5.0V, VSS= 0V, Tc= -55C to +125C) Read Cycle Parameter Read Cycle Time Address Access Time Chip Select Access Time Output Hold from Address Change Output Enable to Output Valid Chip Select to Output in Low Z (1) Output Enable to Output in Low Z (1) Chip Deselect to Output in High Z (1) Output Disable to Output in High Z (1)
Note 1. Guaranteed by design, but not tested
Sym
-017 -020 -025 -035 -045 -055 Min Max Min Max Min Max Min Max Min Max Min Max 17 0 2 0 17 17 9 9 9 20 0 2 0 20 20 10 10 10 25 0 2 0 25 25 12 12 12 35 0 4 0 35 35 25 15 15 4 0 45 0 45 45 25 20 20 4 0 55 0 55 55 25 20 20
Units
tRC tAA tACS tOH tOE tCLZ tOLZ tCHZ tOHZ
ns ns ns ns ns ns ns ns ns
Write Cycle Parameter Write Cycle Time Chip Select to End of Write Address Valid to End of Write Data Valid to End of Write Write Pulse Width Address Setup Time Address Hold Time Output Active from End of Write (1) Write to Output in High Z (1) Data Hold from Write Time
Note 1. Guaranteed by design, but not tested
Sym tWC tCW tAW tDW tWP tAS tAH tOW tWHZ tDH
-017 -020 -025 -035 -045 -055 Min Max Min Max Min Max Min Max Min Max Min Max 17 15 15 12 14 2 0 0 0 9 20 15 15 12 14 2 0 0 0 9 25 20 20 15 15 2 0 0 0 10 35 25 25 20 25 2 0 0 0 15 45 35 35 25 35 2 5 5 0 20 55 50 50 25 40 2 5 5 0 25 -
Units ns ns ns ns ns ns ns ns ns ns
Data Retention Electrical Characteristics (Special Order Only)
(Tc = -55C to +125C) Test Conditions CE VCC - 0.2V VCC = 3V Parameter VCC for Data Retention Sym VDR Min 2 ALL SPEEDS Typ Max 0.5 5.5 7.0 Units V mA
Data Retention Current (1) ICCDR1
Available in Low Power version. Call For Information.
Truth Table
Mode Standby Read Output Disable Write
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CE H L L L
OE X L H X
WE X H H L
Data I/O High Z Data Out High Z Data In
3
Power Standby (deselect/power down) Active Active (deselected) Active
SCD1664 REV C 5/10/00 Plainview NY (516) 694-6700
Timing Diagrams
Read Cycle Timing Diagrams
Read Cycle 1 (CE = OE = VIL, WE = VIH)
tRC A0-18 tAA tOH DI/O Previous Data Valid Data Valid CE tAS WE
SEE NOTE
Write Cycle Timing Diagrams
Write Cycle 1 (WE Controlled, OE = VIL)
tWC A0-16 tAW tCW tAH
tWP
SEE NOTE
tOW
tWHZ
tDW Data Valid
tDH
DI/O
Read Cycle 2 (WE = VIH)
tRC A0-18 tAA CE tACS tCLZ
SEE NOTE
Write Cycle 2 (CE Controlled, OE = VIH )
tWC A0-18 tAW tCHZ
SEE NOTE
tAH tCW
tAS CE
OE tWP tOE tOLZ
SEE NOTE
tOHZ
SEE NOTE
WE tDW DI/O Data Valid tDH
DI/O
High Z
Data Valid
UNDEFINED
DON'T CARE
Note: Guaranteed by design, but not tested.
AC Test Circuit
Current Source IOL
Parameter
To Device Under Test CL = 50 pF IOH Current Source VZ ~ 1.5 V (Bipolar Supply)
Typical 0 - 3.0 5 1.5
Units V ns V
Input Pulse Level Input Rise and Fall Input and Output Timing Reference Level
Notes: 1) VZ is programmable from -2V to +7V. 2) IOL and IOH programmable from 0 to 16 mA. 3) Tester Impedance ZO = 75. 4) VZ is typically the midpoint of VOH and VOL. 5) IOL and IOH are adjusted to simulate a typical resistance load circuit. 6) ATE Tester includes jig capacitance.
Aeroflex Circuit Technology
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SCD1664 REV C 5/10/00
Plainview NY (516) 694-6700
Pin Numbers & Functions
36 Pins -- Flat Package
Pin # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Function A0 A1 A2 A3 A4 CE I/O0 I/O1 VCC VSS I/O2 I/O3 WE A5 A6 A7 A8 A9 Pin # 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Function NC A10 A11 A12 A13 A14 I/O4 I/O5 VCC VSS I/O6 I/O7 OE A15 A16 A17 A18 NC
Package Outline "F3" -- Small Flat Package, 36 Leads
.930 MAX
Pin 36
Pin 19
.035.003 .125 MAX
.515 MAX
Pin 1
Pin 18 .350 MIN .005 .002 .017 .002 .850 REF (17 spaces at .050) 2 sides
All dimensions in inches 5
Aeroflex Circuit Technology
SCD1664 REV C 5/10/00
Plainview NY (516) 694-6700
Pin Numbers & Functions
36 Pins -- CSOJ
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 A0 A1 A2 A3 A4 CE I/O0 I/O1 VCC VSS I/O2 I/O3 WE A5 A6 A7 A8 A9 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 NC A10 A11 A12 A13 A14 I/O4 I/O5 VCC VSS I/O6 I/O7 OE A15 A16 A17 A18 NC
Package Outline "F4" -- .435" x .920" CSOJ, 36 Pins
.930 MAX
*.184
MAX
0.008 .002 .435 MAX .376 .01
.050 .01
All dimensions in inches
Pin 1 .050 TYP .017 ..002 .850 TYP
*.155 MAX thickness available, contact factory for details
Aeroflex Circuit Technology
6
SCD1664 REV C 5/10/00
Plainview NY (516) 694-6700
Pin Numbers & Functions
32 Pins -- DIP
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 I/O3 I/O4 I/O5 I/O6 I/O7 CE A10 OE A11 A9 A8 A13 WE A17 A15 VCC
Package Outline "P4" -- .590" x 1.67" DIP Package, 32 Leads
1.623 MAX Pin 32
Pin 1 Pin 1 Identifier
.165 MAX
.604 MAX
.100 TYP
.055 .045
.020 .016 TYP
.060 .040 TYP
.125 MIN
.012 .009
.610 .590
All dimensions in inches
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7
SCD1664 REV C 5/10/00
Plainview NY (516) 694-6700
CIRCUIT TECHNOLOGY
Ordering Information
Model Number
ACT-S512K8N-017F3Q ACT-S512K8N-020F3Q ACT-S512K8N-025F3Q ACT-S512K8N-035F3Q ACT-S512K8N-045F3Q ACT-S512K8N-055F3Q ACT-S512K8N-017P4Q ACT-S512K8N-020P4Q ACT-S512K8N-025P4Q ACT-S512K8N-035P4Q ACT-S512K8N-045P4Q ACT-S512K8N-055P4Q ACT-S512K8N-017F4Q ACT-S512K8N-020F4Q ACT-S512K8N-025F4Q ACT-S512K8N-035F4Q ACT-S512K8N-045F4Q ACT-S512K8N-055F4Q * Pending
DESC Part Number
5962-9561310HUC 5962-9561309HUC 5962-9561308HUC 5962-9561307HUC 5962-9561306HUC 5962-9561305HUC 5962-9561310HYC 5962-9561309HYC 5962-9561308HYC 5962-9561307HYC 5962-9561306HYC 5962-9561305HYC 5962-9561310HZC 5962-9561309HZC 5962-9561308HZC 5962-9561307HZC 5962-9561306HZC 5962-9561305HZC
Speed
17ns 20ns 25ns 35ns 45ns 55ns 17ns 20ns 25ns 35ns 45ns 55ns 17ns 20ns 25ns 35ns 45ns 55ns
Package
36 Lead Flat 36 Lead Flat 36 Lead Flat 36 Lead Flat 36 Lead Flat 36 Lead Flat 32 Pin DIP 32 Pin DIP 32 Pin DIP 32 Pin DIP 32 Pin DIP 32 Pin DIP 36 Lead CSOJ 36 Lead CSOJ 36 Lead CSOJ 36 Lead CSOJ 36 Lead CSOJ 36 Lead CSOJ
Model Number Breakdown
ACT- S 512K 8 N- 020 F4 Q
Aeroflex Circuit Technology Memory Type S = SRAM Memory Depth Memory Width, Bits Pinout Options N = None Memory Speed, ns Screening C = Commercial Temp, 0C to +70C I = Industrial Temp, -40C to +85C T = Military Temp, -55C to +125C M = Military Temp, -55C to +125C, Screening * Q = MIL-PRF-38534 Compliant/SMD if applicable Package Type & Size Surface Mount Packages F3 = 36 Pin FP F4 = 36 Pin CSOJ Thru-Hole Packages P4 = 32 Pin DIP
Specification subject to change without notice
Aeroflex Circuit Technology 35 South Service Road Plainview New York 11803
Aeroflex Circuit Technology
* Screened to the individual test methods of MIL-STD-883 Telephone: (516) 694-6700 FAX: (516) 694-6715 Toll Free Inquiries: 1-(800) 843-1553
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SCD1664 REV C 5/10/00 Plainview NY (516) 694-6700

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